Please use this identifier to cite or link to this item:
|Title:||Realizing steep subthreshold swing with impact ionization transistors|
|Citation:||Yeo, Y.-C. (2009). Realizing steep subthreshold swing with impact ionization transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 43-44. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2009.5159284|
|Abstract:||Recent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature. Techniques for enhancing impact ionization rate and reducing the breakdown voltage V BD for device performance improvement will be discussed. Challenges faced by I-MOS will be highlighted. Some challenges may be addressed through the strain and materials engineering. Limitations of the I-MOS will also be discussed. ©2009 IEEE.|
|Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.