Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84120
Title: Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric
Authors: Koh, B.H.
Ng, T.H.
Zheng, J.X.
Chim, W.K. 
Choi, W.K. 
Keywords: Metal-insulator-semiconductor (MIS)
Quantum mechanical (QM) modeling
Zirconium dioxide
Issue Date: 2002
Source: Koh, B.H.,Ng, T.H.,Zheng, J.X.,Chim, W.K.,Choi, W.K. (2002). Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 135-140. ScholarBank@NUS Repository.
Abstract: Self-consistent numerical calculations were conducted to study the gate tunneling current and capacitance of metal-insulator-silicon (MIS) structures using zirconium dioxide as the gate insulator layer. Quantum mechanical (QM) simulation of the capacitance-voltage (C-V) characteristics was also performed for analyzing the electrical thickness, dielectric constant, and the interface trap density level of the zirconium dioxide layer. For gate current analysis, both the bulk high-κ layer and interfacial silicate layer were considered in the simulation. In the open-boundary system, the quantum transmitting boundary method (QTBM) was used to connect the propagating waves in the metal gate with the stationary waves at the silicon surface. The complex eigenvalues, or the lifetimes of the quasi-bound states, were calculated to obtain the gate current density. It is shown that the simulated gate current agrees with the experimental measurements obtained from aluminum gate/zirconium dioxide/n-type silicon (Al/ZrO 2/n-Si) MIS devices with equivalent oxide thickness (EOT) of ∼2.5 nm. © 2002 IEEE.
Source Title: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
URI: http://scholarbank.nus.edu.sg/handle/10635/84120
ISBN: 0780375785
Appears in Collections:Staff Publications

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