Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.557108
Title: Phase transformation of Ge 1Sb 4Te 7 films induced by single femtosecond pulse
Authors: Wang, Q.F.
Shi, L.P.
Huang, S.M.
Miao, X.S.
Chong, T.C. 
Keywords: Amorphization
Crystallization
Femtosecond pulse
Ge 1Sb 4Te 7 films
Non-thermal phase change
Reflective intensity
Issue Date: 2004
Citation: Wang, Q.F., Shi, L.P., Huang, S.M., Miao, X.S., Chong, T.C. (2004). Phase transformation of Ge 1Sb 4Te 7 films induced by single femtosecond pulse. Proceedings of SPIE - The International Society for Optical Engineering 5380 : 403-410. ScholarBank@NUS Repository. https://doi.org/10.1117/12.557108
Abstract: Phase transformations of 100nm Ge 1Sb 4Te 7 films induced by single 130fs pulse at 800nm have been investigated with time-resolved microscope. With an average fluence of 30mJ/cm 2, a reflective intensity increase was observed within 1ps in 100nm as-deposited Ge 1Sb 4Te 7 films after excitation by intense femtosecond pulse, which was consistent to an electronically induced non-thermal phase transformation. XRD measurement confirmed that single femtosecond pulse could induce crystalline marks in 100nm as-deposited Ge 1Sb 4Te 7 films. Our results indicated that single femtosecond pulse could trigger both crystalline and amorphous phase in 100nm Ge 1Sb 4Te 7 films. The fluence for crystallization was higher than that for amorphization.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/84085
ISSN: 0277786X
DOI: 10.1117/12.557108
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