Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2012.6479062
Title: Performance comparison of III-V MOSFETs with source filter for electron energy
Authors: Lam, K.-T.
Yeo, Y.-C. 
Liang, G. 
Issue Date: 2012
Citation: Lam, K.-T.,Yeo, Y.-C.,Liang, G. (2012). Performance comparison of III-V MOSFETs with source filter for electron energy. Technical Digest - International Electron Devices Meeting, IEDM : 17.6.1-17.6.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2012.6479062
Abstract: We evaluated the performances of two high-energy-electrons filtering MOSFET designs, the superlattice source-extension (SL) MOSFET and the p +/n+ source-junction (p+n+ source) MOSFET, using the sp3d5s full-band tight-binding model, coupled with a non-equilibrium Green's function quantum transport simulator in the ballistic regime. III-V semicoductor heterojunctions made up of GaAs and In53Ga47As are investigated and the optimizing parameters such as the length of the barrier and well regions for the SL-MOSFETs and the doping concentrations and the length of n+ region for the p +n+ source MOSFETs are varied to understand their effects on the device performance parameters. More detailed interactions between electrons are considered in the present full-band simulations. Our optimized SL-MOSFET and p+n+ source MOSFET achieve ION = 0.81 and 0.60 mA/μm, SS = 20.9 and 23.1mV/dec@VDS=0.6V, respectively. © 2012 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/84075
ISBN: 9781467348706
ISSN: 01631918
DOI: 10.1109/IEDM.2012.6479062
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