Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2011.5991642
Title: Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors
Authors: Lam, K.-T.
Peck, Y.-Z.
Lim, Z.-H.
Liang, G. 
Keywords: density functinoal theory
field-effect transistor
graphene nanoribbon
Schottky barrier
simulation
Issue Date: 2011
Citation: Lam, K.-T.,Peck, Y.-Z.,Lim, Z.-H.,Liang, G. (2011). Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors. Proceedings - International NanoElectronics Conference, INEC : -. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2011.5991642
Abstract: We present our computational study on the transport properties of intrinsic armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon (AGNR & ZGNR) Schottky barrier field-effect transistors (SBFETs). Using ab initio models, we observed that the metal-induced gap states increase the OFF-state current (IOFF) significantly of very short channel devices and the ON/OFF current ratio (ION/IOFF) degrades as the ribbon width increases. Our device performance comparison indicates that while ZGNR SBFETs provide a lower subthreshold swing, AGNR SBFETs provide a lower I OFF and higher ION/IOFF at similar ribbon widths. © 2011 IEEE.
Source Title: Proceedings - International NanoElectronics Conference, INEC
URI: http://scholarbank.nus.edu.sg/handle/10635/84074
ISBN: 9781457703799
ISSN: 21593523
DOI: 10.1109/INEC.2011.5991642
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