Please use this identifier to cite or link to this item:
|Title:||Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors|
|Keywords:||density functinoal theory|
|Source:||Lam, K.-T.,Peck, Y.-Z.,Lim, Z.-H.,Liang, G. (2011). Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors. Proceedings - International NanoElectronics Conference, INEC : -. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2011.5991642|
|Abstract:||We present our computational study on the transport properties of intrinsic armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon (AGNR & ZGNR) Schottky barrier field-effect transistors (SBFETs). Using ab initio models, we observed that the metal-induced gap states increase the OFF-state current (IOFF) significantly of very short channel devices and the ON/OFF current ratio (ION/IOFF) degrades as the ribbon width increases. Our device performance comparison indicates that while ZGNR SBFETs provide a lower subthreshold swing, AGNR SBFETs provide a lower I OFF and higher ION/IOFF at similar ribbon widths. © 2011 IEEE.|
|Source Title:||Proceedings - International NanoElectronics Conference, INEC|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 9, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.