Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2009.5378197
Title: Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
Authors: Chin, H.-C.
Gong, X.
Guo, H.
Zhou, Q. 
Koh, S.-M.
Lee, H.K.
Shi, L.
Yeo, Y.-C. 
Issue Date: 2009
Source: Chin, H.-C.,Gong, X.,Guo, H.,Zhou, Q.,Koh, S.-M.,Lee, H.K.,Shi, L.,Yeo, Y.-C. (2009). Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress. 2009 International Semiconductor Device Research Symposium, ISDRS '09 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2009.5378197
Source Title: 2009 International Semiconductor Device Research Symposium, ISDRS '09
URI: http://scholarbank.nus.edu.sg/handle/10635/84073
ISBN: 9781424460304
DOI: 10.1109/ISDRS.2009.5378197
Appears in Collections:Staff Publications

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