Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2011.6135216
Title: Pd-InGaAs as a new self-aligned contact material on InGaAs
Authors: Kong, E.Y.-J.
Zhang, X.
Ivana
Zhou, Q. 
Yeo, Y.-C. 
Issue Date: 2011
Citation: Kong, E.Y.-J.,Zhang, X.,Ivana,Zhou, Q.,Yeo, Y.-C. (2011). Pd-InGaAs as a new self-aligned contact material on InGaAs. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2011.6135216
Abstract: Introduction. Self-alignment of source/drain (S/D) contacts to the transistor gate is important, as it brings the S/D contacts close to the channel and allows the achievement of low parasitic S/D series resistance R SD. Low R SD is needed for high-mobility and short-channel transistors where the channel resistance is low and external resistance is a significant proportion of the total resistance between source and drain. Fig. 1 illustrates the self-aligned S/D contact metallization process for InGaAs transistors. Recently, the first self-aligned Ni-InGaAs S/D contacts were demonstrated. 1, 2 In this work, Pd-InGaAs is explored as a new self-aligned contact metallization technology. © 2011 IEEE.
Source Title: 2011 International Semiconductor Device Research Symposium, ISDRS 2011
URI: http://scholarbank.nus.edu.sg/handle/10635/84070
ISBN: 9781457717550
DOI: 10.1109/ISDRS.2011.6135216
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Oct 14, 2018

Page view(s)

31
checked on Oct 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.