Please use this identifier to cite or link to this item: https://doi.org/10.1109/MWSYM.2013.6697514
Title: Passives design for a high performance W-band amplifier
Authors: Bi, X.
Guo, Y. 
Xiong, Y.-Z.
Arasu, A.
Zhang, M.
Je, M.
Keywords: Cascode
Coplanar waveguide
Electromagnetic optimization
Low noise amplifier
Passives design
Shielding
SiGe BiCMOS
Issue Date: 2013
Citation: Bi, X.,Guo, Y.,Xiong, Y.-Z.,Arasu, A.,Zhang, M.,Je, M. (2013). Passives design for a high performance W-band amplifier. IEEE MTT-S International Microwave Symposium Digest : -. ScholarBank@NUS Repository. https://doi.org/10.1109/MWSYM.2013.6697514
Abstract: A high performance W-band LNA is designed in 0.13 μm SiGe BiCMOS technology by firstly deploying SC-GCPW input matching network, shielded cascode stage and partition layout. Noise figure of the LNA, parasitic coupling of the cascode stage and reverse isolation are considerably reduced. The LNA achieved a measured gain of above 45 dB, noise figure of 7.2 dB at 95 GHz and 19 mW power consumption in 0.13 μm BiCMOS which is the state-of-the-art on silicon. This LNA performance could help the W-band total power radiometer obtain a 0.5-K NEΔT. © 2013 IEEE.
Source Title: IEEE MTT-S International Microwave Symposium Digest
URI: http://scholarbank.nus.edu.sg/handle/10635/84066
ISBN: 9781467361767
ISSN: 0149645X
DOI: 10.1109/MWSYM.2013.6697514
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