Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3487588
Title: Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer
Authors: Zang, H.
Wang, J. 
Lo, G.Q.
Lee, S.J. 
Issue Date: 2010
Citation: Zang, H., Wang, J., Lo, G.Q., Lee, S.J. (2010). Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer. ECS Transactions 33 (6) : 573-577. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487588
Abstract: We demonstrate monolithic integration of waveguided Metal-Germanium -Metal photodetector (WG-MGM-PD) and Ge CMOS with high-k dielectric and metal gate on SOI wafer using novel epi-growth technique. WG-MGM-PD achieves a responsivity of 0.6AZW and speed (f3dB) of 17.4GHz. Ge CMOS with ultra-thin EOT (1.4nm) was demonstrated with 2 times hole mobility improvement over the Si universal mobility and very low gate leakage current (10 -5∼10-4A/cm2). ©The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/84058
ISBN: 9781566778251
ISSN: 19385862
DOI: 10.1149/1.3487588
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