Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2012.02.014
Title: Optimisation of p-doped μc-Si:H emitter layers in crystalline-amorphous silicon heterojunction solar cells
Authors: Ling, Z.P.
Ge, J.
Mueller, T.
Wong, J.
Aberle, A.G. 
Keywords: A-Si:H
Amorphous silicon
Crystallinity
Effective carrier lifetime
Heterojunction solar cell
Microcrystalline silicon
Optical bandgap
P-doped microcrystalline silicon
Silicon wafer solar cells
Issue Date: 2012
Citation: Ling, Z.P., Ge, J., Mueller, T., Wong, J., Aberle, A.G. (2012). Optimisation of p-doped μc-Si:H emitter layers in crystalline-amorphous silicon heterojunction solar cells. Energy Procedia 15 : 118-128. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.02.014
Abstract: Heterojunction silicon wafer solar cells, using a microcrystalline silicon (μc-Si:H) thin-film emitter and a very thin intrinsic amorphous silicon (a-Si:H) passivation layer between the crystalline silicon wafer and the emitter layer, have been reported to exhibit stable performance and high efficiency. Desired properties for the emitter layer include wide bandgap, low surface and interface recombination, and good doping efficiency. In this study, we report on the thin-film properties of p-doped μc-Si:H emitter layers deposited using RF (13.56 MHz) PECVD, at different SiH 4/H 2gas flow ratios, pressures, and temperatures at the same RF power. Trends relating deposition conditions to relevant film characteristics such as thickness, crystalline fraction and conductivity are discussed. Finally, device relevant symmetrical p +/i/c-Si/i/p + heterojunction lifetime test structures are investigated, using the optimised parameters for p-doped μc-Si:H layers (discussed in this paper) and for intrinsic a-Si:H layers (discussed in a companion paper [1]). These exhibit promising effective lifetimes of up to 2.4 ms at an injection level of 10 15 cm -3. © 2011 Published by Elsevier Ltd.
Source Title: Energy Procedia
URI: http://scholarbank.nus.edu.sg/handle/10635/84056
ISSN: 18766102
DOI: 10.1016/j.egypro.2012.02.014
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