Please use this identifier to cite or link to this item:
https://doi.org/10.1109/INEC.2008.4585468
DC Field | Value | |
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dc.title | Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron | |
dc.contributor.author | Dixit, V. | |
dc.contributor.author | Liu, H.F. | |
dc.contributor.author | Xiang, N. | |
dc.date.accessioned | 2014-10-07T04:48:12Z | |
dc.date.available | 2014-10-07T04:48:12Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Dixit, V., Liu, H.F., Xiang, N. (2008). Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 198-201. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585468 | |
dc.identifier.isbn | 9781424415731 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84047 | |
dc.description.abstract | The band structure and optical gain spectra of indium segregated Ga 0.628In0.372N0.015As0.985/GaAs single quantum well (QW) have been studied theoretically using 10-band k · p Hamiltonian. The optical gains of the TE and TM modes are calculated by employing the many-body optical gain model. The subbands and the optical gains of the GaInNAs/GaAs QW have been investigated for various segregation coefficients. It is found that the indium segregation tends to reduce the subband coupling. When the segregation coefficient R is smaller than 0.75, the gain maximum of the TE mode decreases as a function of R, however, it turns to increase when R is larger than 0.75. On the other hand, the gain maximum of the TM mode shows a monolithic increase with the increase of R. For R < 0.6, the effects of indium segregation on the optical gain of both the TE and TM modes are minor. These results may be useful when designing GaInNAs/GaAs QW based lasers. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/INEC.2008.4585468 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/INEC.2008.4585468 | |
dc.description.sourcetitle | 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 | |
dc.description.page | 198-201 | |
dc.identifier.isiut | 000259893500044 | |
Appears in Collections: | Staff Publications |
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