Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2008.4585468
Title: Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron
Authors: Dixit, V.
Liu, H.F.
Xiang, N. 
Issue Date: 2008
Citation: Dixit, V., Liu, H.F., Xiang, N. (2008). Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 198-201. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585468
Abstract: The band structure and optical gain spectra of indium segregated Ga 0.628In0.372N0.015As0.985/GaAs single quantum well (QW) have been studied theoretically using 10-band k · p Hamiltonian. The optical gains of the TE and TM modes are calculated by employing the many-body optical gain model. The subbands and the optical gains of the GaInNAs/GaAs QW have been investigated for various segregation coefficients. It is found that the indium segregation tends to reduce the subband coupling. When the segregation coefficient R is smaller than 0.75, the gain maximum of the TE mode decreases as a function of R, however, it turns to increase when R is larger than 0.75. On the other hand, the gain maximum of the TM mode shows a monolithic increase with the increase of R. For R < 0.6, the effects of indium segregation on the optical gain of both the TE and TM modes are minor. These results may be useful when designing GaInNAs/GaAs QW based lasers. © 2008 IEEE.
Source Title: 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
URI: http://scholarbank.nus.edu.sg/handle/10635/84047
ISBN: 9781424415731
DOI: 10.1109/INEC.2008.4585468
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