Please use this identifier to cite or link to this item:
|Title:||Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron|
|Citation:||Dixit, V., Liu, H.F., Xiang, N. (2008). Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 198-201. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585468|
|Abstract:||The band structure and optical gain spectra of indium segregated Ga 0.628In0.372N0.015As0.985/GaAs single quantum well (QW) have been studied theoretically using 10-band k · p Hamiltonian. The optical gains of the TE and TM modes are calculated by employing the many-body optical gain model. The subbands and the optical gains of the GaInNAs/GaAs QW have been investigated for various segregation coefficients. It is found that the indium segregation tends to reduce the subband coupling. When the segregation coefficient R is smaller than 0.75, the gain maximum of the TE mode decreases as a function of R, however, it turns to increase when R is larger than 0.75. On the other hand, the gain maximum of the TM mode shows a monolithic increase with the increase of R. For R < 0.6, the effects of indium segregation on the optical gain of both the TE and TM modes are minor. These results may be useful when designing GaInNAs/GaAs QW based lasers. © 2008 IEEE.|
|Source Title:||2008 2nd IEEE International Nanoelectronics Conference, INEC 2008|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 21, 2018
checked on May 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.