Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2012.6317964
Title: Numerical modeling of axial junction compositionally graded In xGa1-xN nanorod solar cells
Authors: Ho, J.-W.
Tay, A.A.O. 
Chua, S.-J. 
Keywords: axial junction
compositionally graded
finite element simulation
indium gallium nitride
nanorods
photovoltaics
Issue Date: 2012
Source: Ho, J.-W.,Tay, A.A.O.,Chua, S.-J. (2012). Numerical modeling of axial junction compositionally graded In xGa1-xN nanorod solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference : 1898-1903. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2012.6317964
Abstract: In this work, the performance of compositionally graded axial junction InxGa1-xN nanorod solar cells with an absorber region of In0.45Ga0.55N (Eg∼1.8eV) is examined using the finite element semiconductor device simulation software Taurus Medici from Synopsys®. While nanorod structures can provide significant strain relief resulting in excellent crystalline quality of the typically defect-ridden full-spectrum InGaN ternary semiconductor alloy, we show that other considerations must be taken into account to justify the use of InGaN axial junction nanorods for photovoltaic applications. Without considering light trapping effects, the reduction in junction area can significantly limit the collection efficiency of the nanorods. Further, the greater periphery surface area of the nanorods can lead to substantial increase in surface recombination with significant decline in the short-circuit current density Jsc and the open-circuit voltage Voc for the simulated device structure. Even with a predefined zero surface recombination velocity, the proximity of the nanorod circumferential surface to the axial junction can lead to electric field fringing effects that degrade the Voc. In all, surface recombination is found to be the major factor limiting the performance of the InxGa1-xN axial junction nanorod solar cells examined. © 2012 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/84030
ISBN: 9781467300643
ISSN: 01608371
DOI: 10.1109/PVSC.2012.6317964
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

18
checked on Feb 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.