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|Title:||Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors|
|Citation:||Koh, S.-M.,Zhou, Q.,Thanigaivelan, T.,Henry, T.,Samudra, G.S.,Yeo, Y.C. (2011). Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors. Technical Digest - International Electron Devices Meeting, IEDM : 35.7.1-35.7.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2011.6131681|
|Abstract:||We report a new technique of achieving reduced nickel silicide contact resistance in strained n-FETs, where a pre-silicide Aluminum (Al) implant was introduced, and the Al profile was controlled/engineered by Carbon (C). C suppresses Al diffusion during silicidation, hence retaining high concentration of Al within the NiSi. Incorporating Al within NiSi reduces the Schottky barrier height for n-Si:C contact, leading to 18 % I On improvement for Si:C S/D nFETs with no compromise on short channel effects. © 2011 IEEE.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
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