Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors
Koh, S.-M. Zhou, Q. Thanigaivelan, T. Henry, T. Samudra, G.S. Yeo, Y.C.
Koh, S.-M.
Thanigaivelan, T.
Henry, T.
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Abstract
We report a new technique of achieving reduced nickel silicide contact resistance in strained n-FETs, where a pre-silicide Aluminum (Al) implant was introduced, and the Al profile was controlled/engineered by Carbon (C). C suppresses Al diffusion during silicidation, hence retaining high concentration of Al within the NiSi. Incorporating Al within NiSi reduces the Schottky barrier height for n-Si:C contact, leading to 18 % I On improvement for Si:C S/D nFETs with no compromise on short channel effects. © 2011 IEEE.
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Source Title
Technical Digest - International Electron Devices Meeting, IEDM
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Date
2011
DOI
10.1109/IEDM.2011.6131681
Type
Conference Paper