Please use this identifier to cite or link to this item: https://doi.org/10.1109/.2005.1469271
Title: Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
Authors: Lai, C.H.
Chin, A. 
Chiang, K.C.
Yoo, W.J. 
Cheng, C.F.
McAlister, S.P.
Chi, C.C.
Wu, P.
Issue Date: 2005
Source: Lai, C.H.,Chin, A.,Chiang, K.C.,Yoo, W.J.,Cheng, C.F.,McAlister, S.P.,Chi, C.C.,Wu, P. (2005). Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 210-211. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469271
Abstract: Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84022
ISSN: 07431562
DOI: 10.1109/.2005.1469271
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