Please use this identifier to cite or link to this item:
|Title:||Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts|
|Source:||Tong, Y.,Liu, B.,Lim, P.S.Y.,Zhou, Q.,Yeo, Y.-C. (2012). Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210172|
|Abstract:||We report the demonstration of a new effective Schottky barrier height (Θ Bn) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) or sulfur (S) followed by their segregation at the NiGe/n-Ge interface. Both Se and S are found to segregate at NiGe/n-Ge interface after germanide formation, giving Θ Bn as low as ∼0.1 eV. Nickel monogermanide was formed for samples annealed at 350°C for 30 s. In addition, both Se and S implants cause surface amorphization which possibly leads to improved uniformity of NiGe thickness. © 2012 IEEE.|
|Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 16, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.