Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2011.5872233
Title: Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack
Authors: Gyanathan, A.
Yeo, Y.-C. 
Issue Date: 2011
Source: Gyanathan, A.,Yeo, Y.-C. (2011). Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 62-63. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872233
Abstract: We report a novel multi-level phase change random access memory (PCRAM) cell with a graded Ge2Sb2Te5 (GST) structure which enables multi-bit, high density storage. This work delves into the mechanism of the multilevel switching behaviour with both electrical as well as thermal analyses. © 2011 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84019
ISBN: 9781424484928
DOI: 10.1109/VTSA.2011.5872233
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