Please use this identifier to cite or link to this item:
|Title:||Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack|
|Source:||Gyanathan, A.,Yeo, Y.-C. (2011). Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 62-63. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872233|
|Abstract:||We report a novel multi-level phase change random access memory (PCRAM) cell with a graded Ge2Sb2Te5 (GST) structure which enables multi-bit, high density storage. This work delves into the mechanism of the multilevel switching behaviour with both electrical as well as thermal analyses. © 2011 IEEE.|
|Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 20, 2018
checked on Feb 16, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.