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https://scholarbank.nus.edu.sg/handle/10635/84006
DC Field | Value | |
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dc.title | New developments in Schottky source/drain high-k/metal gate CMOS transistors | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Lee, S. | |
dc.contributor.author | Zhu, S. | |
dc.contributor.author | Li, R. | |
dc.contributor.author | Chen, J. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-10-07T04:47:42Z | |
dc.date.available | 2014-10-07T04:47:42Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Li, M.-F.,Lee, S.,Zhu, S.,Li, R.,Chen, J.,Chin, A.,Kwong, D.L. (2005). New developments in Schottky source/drain high-k/metal gate CMOS transistors. Proceedings - Electrochemical Society PV 2005-05 : 301-302. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84006 | |
dc.description.abstract | Recent developments in Schottky source/drain high-k/metal gate CMOS transistors (SSDT) will be presented. Bulk SSDTs with 1.5-2 nm HfO2 (or HfAlO) gate dielectric and HfN/TaN metal gate have been fabricated using a novel low temperature process. The Si N-SSDT using YbSi2-x suicide, due to the lower Schottky electron barrier of YbSi2.x/Si, has demonstrated a record high Ion/Ioff ratio of ∼10 7 and a steep subthreshold slope of 75 mV/dec. For P-SSDT, the Si SSDT using PtSi silicide S/D shows excellent Ion/Ioff of ∼ 107-108 and subthreshold slope of ∼ 66 mV/dec, while the Ge SSDT using NiGe S/D shows Ion ∼ 5 times larger than that of the Si counterpart with PtSi S/D, due to the lower hole Schottky barrier and the higher hole mobility of Ge channel. The implant-free low temperature process relaxes the thermal budget of high-k dielectric and metal gate Fermi pinning. More improved performances are expected by using ultra-thin-body (UTB) SOI or GOI structures, showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Proceedings - Electrochemical Society | |
dc.description.volume | PV 2005-05 | |
dc.description.page | 301-302 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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