Please use this identifier to cite or link to this item: https://doi.org/10.1557/opl.2012.482
Title: Nano superlattice-like materials as thermal insulators for phase-change random access memory
Authors: Loke, D.
Shi, L.P.
Wang, W.J.
Zhao, R.
Ng, L.T.
Lim, K.G.
Yang, H.X.
Chong, T.C.
Yeo, Y.C. 
Issue Date: 2011
Citation: Loke, D.,Shi, L.P.,Wang, W.J.,Zhao, R.,Ng, L.T.,Lim, K.G.,Yang, H.X.,Chong, T.C.,Yeo, Y.C. (2011). Nano superlattice-like materials as thermal insulators for phase-change random access memory. Materials Research Society Symposium Proceedings 1404 : 92-97. ScholarBank@NUS Repository. https://doi.org/10.1557/opl.2012.482
Abstract: Nanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak temperature compared to that of the cells with the SiO 2 dielectric after constant pulse activation, due to the interface scattering mechanism. Scaling of the SLL dielectric has resulted in higher peak temperatures, which can be even higher after material/structural modifications. Furthermore, the SLL dielectric has good material properties that enable the cells to have high endurance. This shows the effectiveness of the SLL dielectric for advanced memory applications. © 2012 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83995
ISBN: 9781627482219
ISSN: 02729172
DOI: 10.1557/opl.2012.482
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