Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2011.2158634
Title: MRAM device incorporating single-layer switching via rashba-induced spin torque
Authors: Guo, J. 
Tan, S.G. 
Jalil, M.B.A. 
Eason, K.
Lua, S.Y.H.
Rachid, S.
Meng, H.
Keywords: Magnetic RAM (MRAM)
Rashba spin-orbit interaction
spin transfer torque (STT)
Issue Date: Oct-2011
Citation: Guo, J., Tan, S.G., Jalil, M.B.A., Eason, K., Lua, S.Y.H., Rachid, S., Meng, H. (2011-10). MRAM device incorporating single-layer switching via rashba-induced spin torque. IEEE Transactions on Magnetics 47 (10) : 3868-3871. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2011.2158634
Abstract: We designed and modeled a nonvolatile memory device that utilizes the Rashba spin-orbit coupling (SOC) to write data onto a free ferromagnetic (FM) layer and uses the tunneling magnetoresistive (TMR) effect for data read-back. The magnetic RAM (MRAM) device consists of a free (switchable) FM multilayer stack, in which a large internal electric field is induced at the interfaces between the oxide and the FM layer. In the FM layer, data writing by magnetization switching occurs via the Rashba-induced spin torque, while the data reading process in the system could be fulfilled via the current-perpendicular-to-plane TMR response. A general equation of motion for the local moments has been obtained by formally deriving the SU(2) spin-orbit gauge field arising due to SOC and the critical current density is estimated to be 1.2× 108 A/cm2. Micromagnetic simulations were performed to demonstrate the Rashba-induced switching mechanism. By choosing or fabricating alloys with a lower magnetocrystalline anisotropy and enhancing the Rashba coupling strength via surface or interfacial engineering, the critical current may be further reduced to well below 107 A/cm2, a level that may enable the practical realization of a single-layer Rashba-induced magnetization switching memory. © 2011 IEEE.
Source Title: IEEE Transactions on Magnetics
URI: http://scholarbank.nus.edu.sg/handle/10635/83980
ISSN: 00189464
DOI: 10.1109/TMAG.2011.2158634
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