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Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2011.6135174
DC FieldValue
dc.titleModeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
dc.contributor.authorCheng, R.
dc.contributor.authorDing, Y.
dc.contributor.authorLiu, B.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:47:15Z
dc.date.available2014-10-07T04:47:15Z
dc.date.issued2011
dc.identifier.citationCheng, R.,Ding, Y.,Liu, B.,Yeo, Y.-C. (2011). Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2011.6135174" target="_blank">https://doi.org/10.1109/ISDRS.2011.6135174</a>
dc.identifier.isbn9781457717550
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83967
dc.description.abstractWe report the first simulation study of stress induced in a FinFET channel due to a new stress liner Ge 2Sb 2Te 5 (GST). Volume change in the GST material wrapped around a FinFET was used to induce stress in the channel. We show that a large compressive channel stress can be induced. The channel stress could be further enhanced with device scaling. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ISDRS.2011.6135174
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ISDRS.2011.6135174
dc.description.sourcetitle2011 International Semiconductor Device Research Symposium, ISDRS 2011
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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