Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2011.6135174
Title: Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
Authors: Cheng, R. 
Ding, Y.
Liu, B.
Yeo, Y.-C. 
Issue Date: 2011
Source: Cheng, R.,Ding, Y.,Liu, B.,Yeo, Y.-C. (2011). Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2011.6135174
Abstract: We report the first simulation study of stress induced in a FinFET channel due to a new stress liner Ge 2Sb 2Te 5 (GST). Volume change in the GST material wrapped around a FinFET was used to induce stress in the channel. We show that a large compressive channel stress can be induced. The channel stress could be further enhanced with device scaling. © 2011 IEEE.
Source Title: 2011 International Semiconductor Device Research Symposium, ISDRS 2011
URI: http://scholarbank.nus.edu.sg/handle/10635/83967
ISBN: 9781457717550
DOI: 10.1109/ISDRS.2011.6135174
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