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|Title:||Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel|
|Authors:||Cheng, R. |
|Citation:||Cheng, R.,Ding, Y.,Liu, B.,Yeo, Y.-C. (2011). Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2011.6135174|
|Abstract:||We report the first simulation study of stress induced in a FinFET channel due to a new stress liner Ge 2Sb 2Te 5 (GST). Volume change in the GST material wrapped around a FinFET was used to induce stress in the channel. We show that a large compressive channel stress can be induced. The channel stress could be further enhanced with device scaling. © 2011 IEEE.|
|Source Title:||2011 International Semiconductor Device Research Symposium, ISDRS 2011|
|Appears in Collections:||Staff Publications|
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