Please use this identifier to cite or link to this item:
|Title:||Micro-Raman spectroscopic investigation of NiSi films formed on BF2 +-, B+-and non-implanted (100) Si substrates|
|Source:||Donthu, S.K.,Chi, D.Z.,Wong, A.S.W.,Chua, S.J.,Tripathy, S. (2002). Micro-Raman spectroscopic investigation of NiSi films formed on BF2 +-, B+-and non-implanted (100) Si substrates. Materials Research Society Symposium - Proceedings 716 : 465-470. ScholarBank@NUS Repository.|
|Abstract:||Micro-Raman spectroscopic technique was used to investigate vibrational properties of NiSi thin films formed on three different (100) Si substrates: non-implanted, 20-keV BF2 +-implanted, and 20-keV B+-implanted. Raman spectroscopy was also performed on NiSi powder to identify various phonon modes associated with different selection rules of group theory. It was found that Raman peaks of NiSi thin films formed on BF2 +-implanted substrate were broader and shifted to lower frequency side compared to films formed on other substrates. The broadening of the Raman peaks in these films, which also exhibit much improved thermal stability, is attributed to small grains resulting probably from fluorine segregation to grain boundaries and interface. It is further proposed that besides grain boundary segregation, the excess fluorine in the film influences the stress-state in the silicide film resulting in shift of phonon peak positions.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.