Please use this identifier to cite or link to this item: https://doi.org/10.1109/RFIT.2009.5383709
Title: Methodology for optimizing gain and noise figure performance of CMOS LNAs at 60GHz and beyond
Authors: Yeo, S.-B.
Brinkhoff, J.
Lin, F.
Xu, Y.P. 
Keywords: CMOS digital integrated circuits
Gain
LNA
Noise measurement
Issue Date: 2009
Citation: Yeo, S.-B., Brinkhoff, J., Lin, F., Xu, Y.P. (2009). Methodology for optimizing gain and noise figure performance of CMOS LNAs at 60GHz and beyond. 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009 : 241-244. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIT.2009.5383709
Abstract: This paper describes a technique of finding the noise figure of a 60GHz LNA by extracting the equivalent noise resistance (Rn) of a MOSFET through on-wafer noise figure (F50) measurements at lower frequency (up to 18GHz), while the other three noise parameters are extracted from S-parameter measurements beyond 60GHz. This paper demonstrates how the gain-noise figure performance is optimized using extrapolated noise parameters and RF small signal models, with the measurement data (using 67GHz noise source) closely matching the simulated noise figure (extracted using 18GHz noise source) and gain performance at 60GHz. © 2009 IEEE.
Source Title: 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009
URI: http://scholarbank.nus.edu.sg/handle/10635/83949
ISBN: 9781424450312
DOI: 10.1109/RFIT.2009.5383709
Appears in Collections:Staff Publications

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