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|Title:||Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate|
|Citation:||Gao, F.,Li, R.,Chi, D.Z.,Balakumar, S.,Lee, S.J. (2007). Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate. Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 : 77-80. ScholarBank@NUS Repository. https://doi.org/10.1109/IWJT.2007.4279953|
|Abstract:||Systematic studies on Schottky S/D metal-germanide for both Ge PMOSFET (Ni & Pt) and NMOSFET (Er) application are reported. Thermal emission model-based barrier height measurement shows that hole barrier heights for PtGe2/n-Ge (100) and NiGe/n-Ge(100) are extracted as low as Φh ∼ 0 eV and ∼ 0.06 eV, respectively, and electron barreier height, Φe ∼0.12 eV for Er3Ge 4/p-Ge(100) contact. Ni- & Pt-germanide Schottky S/D PMOSFETs on Si0.05Ge0.95/Si substrate with HfO2/TaN gate stack are demonstrated with 80% ∼ 85% hole mobility enhancement against the universal mobility of Si. However, significantly low drive current was observed for Er-germanides Schottky S/D NMOSFET. ©2007 IEEE.|
|Source Title:||Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007|
|Appears in Collections:||Staff Publications|
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