Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2008.4588614
Title: Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection
Authors: Liao, C.C.
Chin, A.
Su, N.C.
Li, M.-F. 
Wang, S.J.
Issue Date: 2008
Source: Liao, C.C.,Chin, A.,Su, N.C.,Li, M.-F.,Wang, S.J. (2008). Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection. Digest of Technical Papers - Symposium on VLSI Technology : 190-191. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2008.4588614
Abstract: We report low Vt Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection with self-aligned and gate-first process compatible with current VLSI. At 1.05 nm EOT, good θm-eff of 5.04 and 4.24 eV, low Vt of -0.16 and 0.13 V, high mobility of 85 and 209 cm2/Vs, and small 85°C BTI ≤40 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS. © 2008 IEEE.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83909
ISBN: 9781424418053
ISSN: 07431562
DOI: 10.1109/VLSIT.2008.4588614
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