Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83908
Title: Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention
Authors: Chin, A. 
Laio, C.C.
Chen, C.
Chiang, K.C.
Yu, D.S.
Yoo, W.J. 
Samudra, G.S. 
Wang, T.
Hsieh, I.J.
McAlister, S.P.
Chi, C.C.
Issue Date: 2005
Citation: Chin, A.,Laio, C.C.,Chen, C.,Chiang, K.C.,Yu, D.S.,Yoo, W.J.,Samudra, G.S.,Wang, T.,Hsieh, I.J.,McAlister, S.P.,Chi, C.C. (2005). Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 158-161. ScholarBank@NUS Repository.
Abstract: To improve trapping using deeper well AlGaN (Χ=3.8eV), lower voltage drop in high-κ AlLaO3 barrier (κ=23), and smaller erase current by large ΔEc of AlLaO3/TaN, the SiO 2/AlGaN/AlLaO3/TaN devices show good 85°C memory integrity of low ±10V 1ms P/E, large 3.9V initial ΔVth and 2.4V extrapolated 10-year retention. A fast 100μs P/E of ±11V still gives 3.0V initial ΔVth and 1.6V 10-year retention. © 2005 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83908
ISBN: 078039268X
ISSN: 01631918
Appears in Collections:Staff Publications

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