Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2004.05.045
Title: Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
Authors: Zhu, S. 
Yu, H.Y. 
Chen, J.D. 
Whang, S.J. 
Chen, J.H. 
Shen, C.
Zhu, C. 
Lee, S.J. 
Li, M.F. 
Chan, D.S.H. 
Yoo, W.J. 
Du, A.
Tung, C.H.
Singh, J.
Chin, A.
Kwong, D.L.
Issue Date: Oct-2004
Citation: Zhu, S., Yu, H.Y., Chen, J.D., Whang, S.J., Chen, J.H., Shen, C., Zhu, C., Lee, S.J., Li, M.F., Chan, D.S.H., Yoo, W.J., Du, A., Tung, C.H., Singh, J., Chin, A., Kwong, D.L. (2004-10). Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode. Solid-State Electronics 48 (10-11 SPEC. ISS.) : 1987-1992. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2004.05.045
Abstract: Both P- and N-channel MOSFETs with Schottky barrier silicide source/drain (S/D), high-K gate dielectric and metal gate were successfully fabricated using a simplified low temperature process. The highest temperature after the high-K dielectric formation is 420°C. PMOSFETs with PtSi S/D show excellent electrical performance of an Ion/Ioff ∼ 10 7-108 and a subthreshold slope of 66 mV/dec, similar to those formed by a normal process with an optimized sidewall spacer. NMOSFETs with DySi2-x S/D have ∼3 orders of magnitude larger I off than that of PMOSFETs and show two slopes in the subthreshold region, resulting in the Ion/Ioff ∼ 105 at low drain voltage. It can be attributed to the relatively higher barrier height (Φn) of DySi2-x/n-Si than that of PtSi/p-Si (Φp) and the rougher DySi2-x film. Adding a thin intermediate Ge layer (∼1 nm) between Dy and Si can improve the film morphology significantly. As a result, the improved performance of N-MOSFET is observed. © 2004 Published by Elsevier Ltd.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/83906
ISSN: 00381101
DOI: 10.1016/j.sse.2004.05.045
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

25
checked on Jul 16, 2018

WEB OF SCIENCETM
Citations

23
checked on Jul 16, 2018

Page view(s)

46
checked on Jun 1, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.