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https://scholarbank.nus.edu.sg/handle/10635/83901
DC Field | Value | |
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dc.title | Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application | |
dc.contributor.author | Wang, Y.Q. | |
dc.contributor.author | Singh, P.K. | |
dc.contributor.author | Yoo, W.J. | |
dc.contributor.author | Yeo, Y.C. | |
dc.contributor.author | Samudra, G. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Hwang, W.S. | |
dc.contributor.author | Chen, J.H. | |
dc.contributor.author | Wang, S.J. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:46:31Z | |
dc.date.available | 2014-10-07T04:46:31Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Wang, Y.Q.,Singh, P.K.,Yoo, W.J.,Yeo, Y.C.,Samudra, G.,Chin, A.,Hwang, W.S.,Chen, J.H.,Wang, S.J.,Kwong, D.-L. (2005). Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 162-165. ScholarBank@NUS Repository. | |
dc.identifier.isbn | 078039268X | |
dc.identifier.issn | 01631918 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83901 | |
dc.description.abstract | We demonstrate electrical properties of an advanced memory structure with high-k dielectric stack of HfAlO/HfSiO/HfAlO and p-type metal gate IrO 2. Combining advantages of high-k HfAlO, good trapping capability of HfSiO, and high work function of the IrO2 gate, we were able to attain much better retention with 10-year ΔVth decay ratio within 18%, higher erasing speed with ΔVth, of 3V within 0.5ms at Vg = -12V, and lower operation voltage as well as lower reading voltage, compared to other contending device structures. © 2005 IEEE. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Technical Digest - International Electron Devices Meeting, IEDM | |
dc.description.volume | 2005 | |
dc.description.page | 162-165 | |
dc.description.coden | TDIMD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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