Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83901
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dc.titleLong retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
dc.contributor.authorWang, Y.Q.
dc.contributor.authorSingh, P.K.
dc.contributor.authorYoo, W.J.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorSamudra, G.
dc.contributor.authorChin, A.
dc.contributor.authorHwang, W.S.
dc.contributor.authorChen, J.H.
dc.contributor.authorWang, S.J.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:46:31Z
dc.date.available2014-10-07T04:46:31Z
dc.date.issued2005
dc.identifier.citationWang, Y.Q.,Singh, P.K.,Yoo, W.J.,Yeo, Y.C.,Samudra, G.,Chin, A.,Hwang, W.S.,Chen, J.H.,Wang, S.J.,Kwong, D.-L. (2005). Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 162-165. ScholarBank@NUS Repository.
dc.identifier.isbn078039268X
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83901
dc.description.abstractWe demonstrate electrical properties of an advanced memory structure with high-k dielectric stack of HfAlO/HfSiO/HfAlO and p-type metal gate IrO 2. Combining advantages of high-k HfAlO, good trapping capability of HfSiO, and high work function of the IrO2 gate, we were able to attain much better retention with 10-year ΔVth decay ratio within 18%, higher erasing speed with ΔVth, of 3V within 0.5ms at Vg = -12V, and lower operation voltage as well as lower reading voltage, compared to other contending device structures. © 2005 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.volume2005
dc.description.page162-165
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

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