Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83901
Title: Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
Authors: Wang, Y.Q.
Singh, P.K.
Yoo, W.J. 
Yeo, Y.C. 
Samudra, G. 
Chin, A.
Hwang, W.S.
Chen, J.H. 
Wang, S.J.
Kwong, D.-L.
Issue Date: 2005
Source: Wang, Y.Q.,Singh, P.K.,Yoo, W.J.,Yeo, Y.C.,Samudra, G.,Chin, A.,Hwang, W.S.,Chen, J.H.,Wang, S.J.,Kwong, D.-L. (2005). Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 162-165. ScholarBank@NUS Repository.
Abstract: We demonstrate electrical properties of an advanced memory structure with high-k dielectric stack of HfAlO/HfSiO/HfAlO and p-type metal gate IrO 2. Combining advantages of high-k HfAlO, good trapping capability of HfSiO, and high work function of the IrO2 gate, we were able to attain much better retention with 10-year ΔVth decay ratio within 18%, higher erasing speed with ΔVth, of 3V within 0.5ms at Vg = -12V, and lower operation voltage as well as lower reading voltage, compared to other contending device structures. © 2005 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83901
ISBN: 078039268X
ISSN: 01631918
Appears in Collections:Staff Publications

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