Please use this identifier to cite or link to this item: https://doi.org/10.1109/.2005.1469204
Title: Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
Authors: Ren, C.
Chan, D.S.H. 
Faizhal, B.B.
Li, M.-F. 
Yeo, Y.-C. 
Trigg, A.D.
Agarwal, A.
Balasubramanian, N.
Pan, J.S.
Lim, P.C.
Kwong, D.-L.
Issue Date: 2005
Citation: Ren, C.,Chan, D.S.H.,Faizhal, B.B.,Li, M.-F.,Yeo, Y.-C.,Trigg, A.D.,Agarwal, A.,Balasubramanian, N.,Pan, J.S.,Lim, P.C.,Kwong, D.-L. (2005). Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 42-43. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469204
Abstract: Lanthanide-incorporated metal nitride (lanthanide-MNx) is investigated as a novel n-type metal gate electrode with tunable work function and good thermal stability for the first time. By incorporating lanthanide elements, such as terbium (Tb), erbium (Er), or ytterbium (Yb), into metal nitride gates, such as TaN and HfN, the work function of MNx can be continuously tuned down to 4.2-4.3 eV even after 1000°C RTA by varying the lanthanide concentrations. In addition, the lanthanide-MNx gates exhibit good thermal stability up to 1000°C on both SiO2 and high-k HfAlO. Possible mechanism for the stability of these metal gates is also discussed and the results show that the enhancement of the nitrogen content in lanthanide-MNx films could be responsible.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83882
ISSN: 07431562
DOI: 10.1109/.2005.1469204
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