Please use this identifier to cite or link to this item: https://doi.org/10.1109/IWJT.2009.5166207
Title: Junction technologies for devices with steep subthreshold swing
Authors: Yeo, Y.-C. 
Issue Date: 2009
Citation: Yeo, Y.-C. (2009). Junction technologies for devices with steep subthreshold swing. Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009 : 11-14. ScholarBank@NUS Repository. https://doi.org/10.1109/IWJT.2009.5166207
Abstract: In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on device structure, doping level, doping gradient, and/or material properties. Device design exploiting semiconductor heterojunctions and lattice mismatched materials for strain engineering are also discussed. ©2009 IEEE.
Source Title: Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009
URI: http://scholarbank.nus.edu.sg/handle/10635/83877
ISBN: 9781424439447
DOI: 10.1109/IWJT.2009.5166207
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