Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2013.6724738
Title: Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?
Authors: Gupta, G.
Jalil, M.B.A. 
Liang, G. 
Issue Date: 2013
Source: Gupta, G.,Jalil, M.B.A.,Liang, G. (2013). Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?. Technical Digest - International Electron Devices Meeting, IEDM : 32.5.1-32.5.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724738
Abstract: We examine the feasibility of using sub-10 nm thick 3D-TI (Bi 2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport via NEGF formalism. We found that because of phonons Bi2Se3 3D-TI may not be that promising a material to replace Cu for interconnects. © 2013 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83870
ISBN: 9781479923076
ISSN: 01631918
DOI: 10.1109/IEDM.2013.6724738
Appears in Collections:Staff Publications

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