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|Title:||Ion beam modification of exchange coupling to fabricate patterned media|
|Keywords:||Antiferromagnetically coupled media|
Focused ion beam
|Citation:||Ranjbar, M., Piramanayagam, S.N., Sbiaa, R., Aung, K.O., Guo, Z.B., Chong, T.C. (2011-03). Ion beam modification of exchange coupling to fabricate patterned media. Journal of Nanoscience and Nanotechnology 11 (3) : 2611-2614. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2011.2704|
|Abstract:||For bit-patterned media, media with low remanent magnetization (M r) and high M r regions are needed for storing information, which is usually achieved by lithographically defining magnetic and non-magnetic regions. In this work, we have investigated the use of ion beam modification of media surface to define the low and high M r states using a medium that is at a low M r state to start with. The low M r state is achieved by the use of synthetic antiferromagnetic coupling obtained in Co-alloy/Ru/Co-alloy trilayer structured film. Local ion beam modification at 30 keV energy using Ga ions was used to create high M r regions. AFM and MFM observations indicated that patterned regions of low and high M r can be observed with ion beam irradiation. This technique is a potential method to achieve patterned media without the need of planarization techniques. © 2011 American Scientific Publishers.|
|Source Title:||Journal of Nanoscience and Nanotechnology|
|Appears in Collections:||Staff Publications|
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