Please use this identifier to cite or link to this item:
|Title:||Ion beam modification of exchange coupling to fabricate patterned media|
|Keywords:||Antiferromagnetically coupled media|
Focused ion beam
|Source:||Ranjbar, M., Piramanayagam, S.N., Sbiaa, R., Aung, K.O., Guo, Z.B., Chong, T.C. (2011-03). Ion beam modification of exchange coupling to fabricate patterned media. Journal of Nanoscience and Nanotechnology 11 (3) : 2611-2614. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2011.2704|
|Abstract:||For bit-patterned media, media with low remanent magnetization (M r) and high M r regions are needed for storing information, which is usually achieved by lithographically defining magnetic and non-magnetic regions. In this work, we have investigated the use of ion beam modification of media surface to define the low and high M r states using a medium that is at a low M r state to start with. The low M r state is achieved by the use of synthetic antiferromagnetic coupling obtained in Co-alloy/Ru/Co-alloy trilayer structured film. Local ion beam modification at 30 keV energy using Ga ions was used to create high M r regions. AFM and MFM observations indicated that patterned regions of low and high M r can be observed with ion beam irradiation. This technique is a potential method to achieve patterned media without the need of planarization techniques. © 2011 American Scientific Publishers.|
|Source Title:||Journal of Nanoscience and Nanotechnology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 15, 2018
WEB OF SCIENCETM
checked on Jan 31, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.