Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83867
Title: Investigations of high endurance asymmetric phase change random access memory
Authors: Hock, K.L.
Shi, L.
Zhao, R.
Yang, H.
Kian, G.L.
Li, J.
Tow, C.C. 
Issue Date: 2008
Source: Hock, K.L.,Shi, L.,Zhao, R.,Yang, H.,Kian, G.L.,Li, J.,Tow, C.C. (2008). Investigations of high endurance asymmetric phase change random access memory. Materials Research Society Symposium Proceedings 1072 : 132-137. ScholarBank@NUS Repository.
Abstract: Asymmetric PCRAM cells were investigated and when the upper contact opening just offset from the bottom contact opening, the reset current was reduced tremendously compared to that of a conventional symmetrical structure due to the improved heat confinement. When the phase change material, Ge 2Sb2Te5 was sputtered with a N2/Ar gas flow ratio of 0.2, the asymmetric PCRAM cells lasted 2.4 × 1010 cycles and it lasted 10 times longer than N-doped symmetrical PCRAM cells. © 2008 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83867
ISBN: 9781605608518
ISSN: 02729172
Appears in Collections:Staff Publications

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