Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83865
Title: Investigation on oxide growth mechanism of PECVD silicon carbide films
Authors: Choi, W.K. 
Leoy, C.C.
Lee, L.P.
Issue Date: 20-Mar-2002
Source: Choi, W.K.,Leoy, C.C.,Lee, L.P. (2002-03-20). Investigation on oxide growth mechanism of PECVD silicon carbide films. International Journal of Modern Physics B 16 (6-7) : 1062-1066. ScholarBank@NUS Repository.
Abstract: The effect of the Si-C, Si-CH3, C-Hn, Si-H and Si dangling bonds on the oxidation process was investigated by monitoring the changes of these bands as a function of oxidation temperature or duration using the infrared spectroscopy technique. We concluded that the activation energy obtained from the linear regime of the oxide growth is related to the C-Hn bonds. We suggested that most of the C-Hn bonds were bonded to Si with n = 3, that gave rise to voids to facilitate the oxidation of amorphous silicon carbide films.
Source Title: International Journal of Modern Physics B
URI: http://scholarbank.nus.edu.sg/handle/10635/83865
ISSN: 02179792
Appears in Collections:Staff Publications

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