Please use this identifier to cite or link to this item:
|Title:||Investigation on oxide growth mechanism of PECVD silicon carbide films|
|Authors:||Choi, W.K. |
|Source:||Choi, W.K.,Leoy, C.C.,Lee, L.P. (2002-03-20). Investigation on oxide growth mechanism of PECVD silicon carbide films. International Journal of Modern Physics B 16 (6-7) : 1062-1066. ScholarBank@NUS Repository.|
|Abstract:||The effect of the Si-C, Si-CH3, C-Hn, Si-H and Si dangling bonds on the oxidation process was investigated by monitoring the changes of these bands as a function of oxidation temperature or duration using the infrared spectroscopy technique. We concluded that the activation energy obtained from the linear regime of the oxide growth is related to the C-Hn bonds. We suggested that most of the C-Hn bonds were bonded to Si with n = 3, that gave rise to voids to facilitate the oxidation of amorphous silicon carbide films.|
|Source Title:||International Journal of Modern Physics B|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 24, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.