Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1705590
Title: Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
Authors: Chen, J. 
Yoo, W.J. 
Tan, Z.Y.L.
Wang, Y.
Chan, D.S.H. 
Issue Date: Jul-2004
Source: Chen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H. (2004-07). Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1552-1558. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1705590
Abstract: The etching properties of HfO based high-K dielectrics were investigated. The study was carried out by using inductively coupled plasma of Cl 2/HBr/CHF3/CF4/O2. It was The result show that the etching of HfON, HfSiO and HfAlO was strongly dependent on etching properties of each phase in the makeup of the films such as HfO 2 and HfN. It was also found that the fluorine containing plasmas were undesirable for etching of HfO based high-K devices.
Source Title: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83862
ISSN: 07342101
DOI: 10.1116/1.1705590
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

39
checked on Feb 15, 2018

WEB OF SCIENCETM
Citations

40
checked on Jan 30, 2018

Page view(s)

37
checked on Feb 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.