Please use this identifier to cite or link to this item: https://doi.org/10.1109/EPTC.2008.4763447
Title: Improved microwave modeling of CMOS spiral inductors with metal dummy fills
Authors: Nan, L.
Mouthaan, K. 
Xiong, Y.-Z.
Shi, J.
Rustagi, S.C.
Ooi, B.-L. 
Issue Date: 2008
Source: Nan, L.,Mouthaan, K.,Xiong, Y.-Z.,Shi, J.,Rustagi, S.C.,Ooi, B.-L. (2008). Improved microwave modeling of CMOS spiral inductors with metal dummy fills. 10th Electronics Packaging Technology Conference, EPTC 2008 : 275-278. ScholarBank@NUS Repository. https://doi.org/10.1109/EPTC.2008.4763447
Abstract: In advanced CMOS technologies, the insertion of metal dummy fills is unavoidable due to stringent metal density process requirements. Therefore existing compact models for on-chip components need to be updated to accurately account for the effect of these metal dummy fills in CMOS RFIC designs. This paper proposes a simple but accurate method to predict the microwave behavior of on-chip spiral inductors with metal dummy fills. Experimental results show that the increase in the dioxide capacitance Cox is the dominant factor leading to the decrease in Qmax and fmax. Two methods are adopted to calculate the change in the dioxide capacitance of on-chip inductors due to the metal dummy fills. Good agreement is achieved between the predicted and measured performance of inductors with metal dummy fills by updating C ox in the conventional models. © 2008 IEEE.
Source Title: 10th Electronics Packaging Technology Conference, EPTC 2008
URI: http://scholarbank.nus.edu.sg/handle/10635/83828
ISBN: 9781424421183
DOI: 10.1109/EPTC.2008.4763447
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