Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.446547
Title: Identification of deep levels in π-GaN epilayers
Authors: Soh, C.B.
Chi, D.Z.
Lim, H.F.
Chua, S.J. 
Keywords: DLTS
GaN
Logarithmic capture kinetic
Transient capacitance
Issue Date: 2001
Citation: Soh, C.B., Chi, D.Z., Lim, H.F., Chua, S.J. (2001). Identification of deep levels in π-GaN epilayers. Proceedings of SPIE - The International Society for Optical Engineering 4594 : 211-220. ScholarBank@NUS Repository. https://doi.org/10.1117/12.446547
Abstract: In this paper, the deep level defects in π-GaN Schottky and the p/π GaN diodes have been studied using digital deep level transient spectroscopy (DLTS). The alternative isothermal technique offered by the DL8000 system is used in complement to conventional temperature scan technique. Electron trap levels at Ec -Et ∼ (0.23 - 0.27 eV) are detected for p/π diode and π-type Schottky diodes by both techniques. Although similar activation energy is obtained, it appears that the traps are associated with different defects, based on the observation of different capture cross-sections (10-16cm2 for π-type Schottky and 10-19cm2 for p/π diodes) and different capture kinetics (exponential for π-type Schottky and logarithmic for p/π diodes). In addition, three other electron traps are found for the π-type Schottky diode at higher temperatures with Ec Et ∼ 0.56 eV, Ec -Et ∼ 0.82 eV and Ec-Et∼ 1.07 eV. The Ec -Et ∼ 0.56 eV and Ec -Et ∼ 0.82 eV traps in π-type Schottky and the Ec -Et ∼ 0.23 eV trap level in p/π diode are attributed to extended defects. For the p/π diode, a minority carrier (hole) trap level is also identified under minority carrier injection, with an energy position at Et -Ev ∼ 0.85eV and a capture cross-section of 8.129×10-14 cm2. This level might be related to the same defects that gives rise to yellow luminescence detected in π-GaN layer.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/83813
ISSN: 0277786X
DOI: 10.1117/12.446547
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