Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.037
Title: High-thermal-stability (HfO2)1-x(Al2O 3)x film fabricated by dual-beam laser ablation
Authors: Li, Q.
Wang, S.J.
Ng, T.H.
Chim, W.K. 
Huan, A.C.H.
Ong, C.K. 
Keywords: High-k dielectric thin films
Interface
Metal-insulator-semiconductor structures
Pulse laser deposition
Issue Date: 10-May-2006
Citation: Li, Q., Wang, S.J., Ng, T.H., Chim, W.K., Huan, A.C.H., Ong, C.K. (2006-05-10). High-thermal-stability (HfO2)1-x(Al2O 3)x film fabricated by dual-beam laser ablation. Thin Solid Films 504 (1-2) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.037
Abstract: The high-thermal-stability amorphous (HfO2) 1-x(Al2O3)x thin films have been fabricated on p-type Si (100) using novel dual-beam pulse laser ablation technique. The microstructure, thermal stability and electrical properties of films have been studied by combinational characterization techniques. Silicides formed at the interface due to the Hf atom diffusion into Si substrate. The slight structure transition occurs at 1000 °C after 10 s rapid thermal annealing in N2, which suggests that the (HfO2) 1-x(Al2O3)x film has high thermal stability. High-frequency capacitance-voltage properties of capacitors show low equivalent oxide thickness at 1.7 nm for 10.0 nm films with high k value (∼22.5). The results indicate that the pseudo-binary (HfO2) 1-x(Al2O3)x film is a promising candidate, which can withstand the high-temperature process for silicon-based industry. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83802
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.037
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