Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83797
Title: High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation
Authors: Tan, Y.N.
Chim, W.K. 
Choi, W.K. 
Joo, M.S. 
Ng, T.H.
Cho, B.J. 
Issue Date: 2004
Source: Tan, Y.N.,Chim, W.K.,Choi, W.K.,Joo, M.S.,Ng, T.H.,Cho, B.J. (2004). High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation. Technical Digest - International Electron Devices Meeting, IEDM : 889-890. ScholarBank@NUS Repository.
Abstract: A HfAlO charge storage layer in SONOS (polysilicon-oxide-silicon nitride-oxide-silicon)-type memory with a SiO 2/high-K/SiO 2 (SOHOS) structure is proposed. Compared to other high-K charge storage layers, HfAlO shows the advantages of high speed program/erase of HfO 2 as well as good charge retention of Al 2O 3, which makes HfAlO the most promising candidate for the charge storage layer. The charge storage and program/erase mechanisms of different charge storage layers in SONOS-type structures are also investigated. © 2004 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83797
ISSN: 01631918
Appears in Collections:Staff Publications

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