Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83788
Title: High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application
Authors: Tran, X.A.
Gao, B.
Kang, J.F.
Wu, L.
Wang, Z.R.
Fang, Z.
Pey, K.L.
Yeo, Y.C. 
Du, A.Y.
Nguyen, B.Y.
Li, M.F.
Yu, H.Y.
Issue Date: 2011
Citation: Tran, X.A.,Gao, B.,Kang, J.F.,Wu, L.,Wang, Z.R.,Fang, Z.,Pey, K.L.,Yeo, Y.C.,Du, A.Y.,Nguyen, B.Y.,Li, M.F.,Yu, H.Y. (2011). High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application. Digest of Technical Papers - Symposium on VLSI Technology : 44-45. ScholarBank@NUS Repository.
Abstract: We report a high performance unipolar RRAM with Ni-electrode/HfO x/AlOy/p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of ∼10 5; 2) ∼100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (> 106 cycles); 5) high temperature retention (>105 s @ 120°C), and high temperature operating stability (> 200°C) without threshold resistive switching; 6) a fast set/rest speed of ∼10/30 ns; 7) full CMOS compatible materials and process: with p +-Si bottom electrode, avoiding the use of noble metals, e.g. Pt. © 2011 JSAP (Japan Society of Applied Physi.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83788
ISBN: 9784863481640
ISSN: 07431562
Appears in Collections:Staff Publications

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