Please use this identifier to cite or link to this item:
|Title:||High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications|
|Citation:||Liu, B.,Gong, X.,Cheng, R.,Guo, P.,Zhou, Q.,Owen, M.H.S.,Guo, C.,Wang, L.,Wang, W.,Yang, Y.,Yeo, Y.-C.,Wan, C.-T.,Chen, S.-H.,Cheng, C.-C.,Lin, Y.-R.,Wu, C.-H.,Ko, C.-H.,Wann, C.H. (2013). High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications. Technical Digest - International Electron Devices Meeting, IEDM : 26.7.1-26.7.3. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724700|
|Abstract:||We report the first realization of high performance Ge CMOS using a novel InAlP passivation scheme. The large conduction band and valence band offsets between InAlP and Ge confine electrons and holes within the Ge channel for n-FETs and p-FETs, respectively. The InAlP cap reduces scattering due to high-K/InAlP interface traps and boosts carrier mobility. As a result, a record high electron mobility μηΡΡ of ∼958 cm 2/V-s at Now of 6×1011 cm-2 was achieved for Ge(100) n-FETs, and a high peak hole mobility of ∼390 cm2/V-s was obtained for Ge(100) p-FETs. High on-state currents Ion of 39.5 μA/μm and 31.2 μA/μm were achieved at gate overdrive Vas-Vm = 1 V and Vds = 1 V for the n-FETs and p-FETs, respectively, with a gate length La of ∼3 μm. In addition, for the first time, this novel InAlP passivation technique was integrated into Ge n-FinFETs, and good control of short channel effects (SCEs) was achieved. © 2013 IEEE.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 20, 2019
checked on Feb 8, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.