Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83777
Title: High density RF MIM capacitors using high-κ AlTaOx dielectrics
Authors: Huang, C.H.
Yang, M.Y.
Chin, A.
Zhu, C. 
Li, M.F. 
Kwong, D.-L.
Issue Date: 2003
Source: Huang, C.H.,Yang, M.Y.,Chin, A.,Zhu, C.,Li, M.F.,Kwong, D.-L. (2003). High density RF MIM capacitors using high-κ AlTaOx dielectrics. IEEE MTT-S International Microwave Symposium Digest 1 : 507-510. ScholarBank@NUS Repository.
Abstract: Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.
Source Title: IEEE MTT-S International Microwave Symposium Digest
URI: http://scholarbank.nus.edu.sg/handle/10635/83777
ISSN: 0149645X
Appears in Collections:Staff Publications

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