Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83767
Title: Graphene nanoribbon schottky diodes using asymmetric contacts
Authors: Kargar, A.
Lee, C. 
Keywords: Asymmetric contacts
Graphene nanoribbon
Schottky diode
Issue Date: 2009
Citation: Kargar, A.,Lee, C. (2009). Graphene nanoribbon schottky diodes using asymmetric contacts. 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 : 243-245. ScholarBank@NUS Repository.
Abstract: This paper presents Schottky diodes based on graphene nanoribbons (GNRs). We show that double gate GNR field effect transistors (FETs) with a p-type semiconducting GNR and asymmetric Schottky contacts provide a good rectification characteristic. The diode rectification can be tuned through the use of different GNRs with various widths. A rectification ratio of ∼ 2×107 is achieved for an N = 10 GNR at a low gate bias voltage of 0.2 V. © 2009 IEEE NANO Organizers.
Source Title: 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
URI: http://scholarbank.nus.edu.sg/handle/10635/83767
ISBN: 9789810836948
Appears in Collections:Staff Publications

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