Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.043
Title: Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure
Authors: Gao, F.
Lee, S.J. 
Balakumar, S.
Du, A.
Foo, Y.-L.
Kwong, D.-L.
Keywords: GOI
MOSFET
SiGe
Solid phase epitaxy
Issue Date: 10-May-2006
Source: Gao, F., Lee, S.J., Balakumar, S., Du, A., Foo, Y.-L., Kwong, D.-L. (2006-05-10). Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure. Thin Solid Films 504 (1-2) : 69-72. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.043
Abstract: We report growth of Si1 - xGex/Si and Ge on insulator by Ge diffusion and SPE (solid phase epitaxy). Different annealing conditions were carried out and evaluated by X-ray diffraction. Ge diffusion and SPE growth of Ge on Si are observed after annealing at 800 °C. EDX (electron dispersive X-ray) composition analysis shows that the top 100 Å Si 1 - xGex layer is quite uniform with Ge content variation of less than 2%. TEM (transmission electron microscopy) picture shows no crystal orientation misalignment between the Si and the top Si1 - xGe x layer. This simple and cost-effective process can be used to make Si1 - xGex /Si substrate for high-mobility metal oxide semiconductor field effect transistor application. In addition, Ge on insulator structure was achieved by SPE lateral growth on pre-patterned SiO2.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83757
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.043
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

22
checked on Feb 15, 2018

WEB OF SCIENCETM
Citations

20
checked on Feb 6, 2018

Page view(s)

32
checked on Feb 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.