Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83756
Title: Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture
Authors: Wong, H.-S.
Tan, L.-H.
Chan, L.
Lo, G.-Q.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2009
Citation: Wong, H.-S.,Tan, L.-H.,Chan, L.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2009). Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture. Digest of Technical Papers - Symposium on VLSI Technology : 92-93. ScholarBank@NUS Repository.
Abstract: We report the first demonstration of Dopant-Segregated Metal-Semiconductor- Metal (DS-MSM) heterostructure on Gate-All-Around Si quantum wire field-effect transistor (QWFET), achieving low external resistance and possibly injection velocity enhancement. ION enhancement of 72% and 26% over conventional QWFETs are obtained for n- and p- DS-MSM QWFETs, respectively. Record high single Si QWFET ION, normalized by quantum wire diameter, of 4.03 mA/μm (n-DS-MSM QWFET) and 1.5 mA/μm (p-DS-MSM QWFET) are reported. In addition, larger ION values are observed for 〈100〉 as compared to 〈110〉 channel orientation DS-MSM QWFETs.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83756
ISBN: 9784863480094
ISSN: 07431562
Appears in Collections:Staff Publications

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