Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346743
Title: GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
Authors: Gao, F.
Lee, S.J. 
Li, R.
Whang, S.J. 
Balakumar, S.
Chi, D.Z.
Kean, C.C.
Vicknesh, S.
Tung, C.H.
Kwong, D.-L.
Issue Date: 2006
Citation: Gao, F.,Lee, S.J.,Li, R.,Whang, S.J.,Balakumar, S.,Chi, D.Z.,Kean, C.C.,Vicknesh, S.,Tung, C.H.,Kwong, D.-L. (2006). GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346743
Abstract: By using novel surface passivation techniques (Plasma Nitridation, AlN-passivation) on GaAs, we demonstrate GaAs p- and n-MOS devices integrated with ALD-HfO2/TaN gate stack. Results show that robust passivation layers can be achieved at HfO2/GaAs interface, leading to good C-V characteristics on both n- and p-type GaAs with low leakage current. It is also found that GaAs MOS devices with plasma nitridation and AlN-passivation show higher thermal-stability than Si-passivated devices.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83754
ISBN: 1424404398
ISSN: 01631918
DOI: 10.1109/IEDM.2006.346743
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