Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.456874
Title: Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition
Authors: Su, Y. 
Zhao, J.
Lü, L. 
Lai, M.O. 
Song, W.D. 
Lu, Y.F. 
Keywords: Diffusion
Epitaxial growth
Interface
MgO
PLD
STO
YBCO
Issue Date: 2002
Citation: Su, Y., Zhao, J., Lü, L., Lai, M.O., Song, W.D., Lu, Y.F. (2002). Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition. Proceedings of SPIE - The International Society for Optical Engineering 4426 : 248-251. ScholarBank@NUS Repository. https://doi.org/10.1117/12.456874
Abstract: STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/83741
ISSN: 0277786X
DOI: 10.1117/12.456874
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