Please use this identifier to cite or link to this item:
|Title:||Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack|
|Source:||Wang, Y.Q.,Gao, D.Y.,Hwang, W.S.,Shen, C.,Zhang, G.,Samudra, G.,Yeo, Y.-C.,Yoo, W.J. (2006). Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346948|
|Abstract:||A Si3N4/SiO2 double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO2 charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 μs and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si3N 4 in place of a part of the SiO2 tunneling layer resulted in fast program and erase (P/E) speed and small Vth shift over 104 endurance cycles.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 13, 2018
checked on Feb 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.